A theoretical study of band structure properties for III–V nitrides quantum wells
نویسندگان
چکیده
Article history: Received 24 March 2011 Received in revised form 22 May 2011 Accepted 6 July 2011 Available online 9 August 2011
منابع مشابه
THEORETICAL ANALYSIS OF TEMPERATURE AND DOPING DEPENDENCE OF MATERIAL PARAMETERS IN GaInNAs/GaAs QUANTUM WELLS
The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 μm are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type d...
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